Semiconductor Devices and Technologies for Future Ultra Low Power Electronics
- Length: 308 pages
- Edition: 1
- Language: English
- Publisher: CRC Press
- Publication Date: 2021-12-10
- ISBN-10: 1032061618
- ISBN-13: 9781032061610
- Sales Rank: #8830172 (See Top 100 Books)
This book covers the fundamentals and significance of 2D materials, and related semiconductor transistor technologies for the next generation ultra-low power applications. It provides a comprehensive coverage of the advanced low power transistors such as NCFETs, FinFETs, TFETs and flexible transistors for future ultra-low power applications owing to their better subthreshold swing and scalability. It also deals with the use of field effect transistors for biosensing applications and covers the design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs and TFETs. TCAD simulation examples are provided at appropriate places. The book,
- Discusses latest updates in the field of ultra-low power semiconductor transistors.
- Provides both experimental and analytical solutions for TFETs and NCFETs.
- Presents the synthesis and fabrication of FinFETs.
- Gives out details of 2D Materials and 2D transistors.
- Explores the application of FETs for biosensing in healthcare field.
This book is aimed at researchers, professionals and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Cover Half Title Title Copyright Contents Preface Editors Contributors Chapter 1 An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective Chapter 2 High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications Chapter 3 Ultra Low Power III-V Tunnel Field-Effect Transistors Chapter 4 Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors Chapter 5 Characterization of Silicon FinFETs under Nanoscale Dimensions Chapter 6 Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications Chapter 7 Switching Performance Analysis of III-V FinFETs Chapter 8 Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling Chapter 9 Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors Chapter 10 Fundamentals of 2-D Materials Chapter 11 Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications Index
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