Physical Models for Semiconductor Quantum Dots
- Length: 988 pages
- Edition: 1
- Language: English
- Publisher: Jenny Stanford Publishing
- Publication Date: 2021-12-16
- ISBN-10: 9814877573
- ISBN-13: 9789814877572
- Sales Rank: #0 (See Top 100 Books)
Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions.
This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects, and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, material scientists and engineers, such as quantum dots and nanocrystals for single electron charging with applications in memory devices, quantum dots for electron spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nano-photonics.
Cover Half Title Title Page Copyright Page Table of Contents Preface Part I: Electrostatic Quantum Dots: Planar Technology Chapter 1: Self-Consistent Analysis of Single Electron Charging Effects in Quantum Dot Nanostructures 1.1: Introduction 1.2: Model 1.2.1: Background 1.2.2: Solution of the Schrödinger Equation 1.2.3: Boundary Conditions 1.2.4: Charge Densities and Equilibrium Statistics 1.2.5: Model Self-Consistency 1.2.6: Transport Model 1.3: Results 1.4: Conclusion Chapter 2: Disorder-Induced Resonant Tunneling in Planar Quantum Dot Nanostructures 2.1: Introduction 2.2: Experimental Device 2.3: Theoretical Background 2.4: Transport 2.5: Results and Discussion 2.6: Conclusion Chapter 3: Three-Dimensional Self-Consistent Simulation of Interface and Dopant Disorders in Delta-Doped Grid-Gate Quantum Dot Devices 3.1: Introduction 3.2: Device Structure and Model 3.3: Models of Disorder 3.3.1: Interface Roughness 3.3.2: Disorder in Densely Doped Regions 3.3.3: Disorder in Sparsely Doped Regions 3.3.4: Disordered Periodic Boundary Condition 3.4: Results and Discussion 3.5: Conclusion Chapter 4: Shell-Filling Effects and Coulomb Degeneracy in Planar Quantum Dot Structures 4.1: Introduction 4.2: Dot Structures 4.3: Computational Model 4.4: Boundary Conditions 4.5: Results 4.6: Conclusions Chapter 5: Shell Filling of Artificial Atoms Within the Density Functional Theory 5.1: Introduction 5.2: Theoretical Methods 5.3: Results and Discussion 5.3.1: Cylindrically Symmetric Confinement (wx = wy) 5.3.2: Anisotropic Confinement (wx wy) 5.3.3: Nonparabolic Confinement Potentials 5.4: Conclusions Chapter 6: Electronic Properties and Spin Polarization in Coupled Quantum Dots 6.1: Introduction 6.2: Dot Structures 6.3: Model 6.4: Results 6.5: Conclusions Chapter 7: Capacitive Energy of Quantum Dots with Hydrogenic Impurity 7.1: Introduction 7.2: Theoretical Methods 7.3: Results and Discussion 7.4: Conclusions Chapter 8: Electron–Electron Interactions Between Orbital Pairs in Quantum Dots 8.1: Introduction 8.2: Model 8.3: Results 8.4: Conclusions Chapter 9: 2D Limit of Exchange–Correlation Density Energy Functional Approximation 9.1: Introduction 9.2: Exchange–Correlation Energy Functionals 9.2.1: Generalized Gradient Approximation 9.2.2: Meta-Generalized Gradient Approximation 9.2.3: Average Density Approximation 9.3: Inherent Limitation of the Local and Semilocal Approximations in the Anisotropic 2D Limit 9.3.1: Basic Issues 9.3.2: Quasi-2D Electron Gas 9.3.3: Quantum Dot 9.3.4: Other Systems 9.4: Summary and Discussions Chapter 10: Single-Electron Charging and Detection in a Laterally Coupled Quantum Dot Circuit in the Few-Electron Regime 10.1: Introduction 10.2: Dot Structures 10.3: Numerical Model 10.4: Results and Discussions 10.5: Conclusion Chapter 11: Engineering the Quantum Point Contact Response to Single-Electron Charging in a Few-Electron Quantum Dot Circuit Chapter 12: Electrostatic Cross-Talk Between Quantum Dot and Quantum Point Contact Charge Read-Out in Few-Electron Quantum Dot Circuits 12.1: Introduction 12.2: Dot Structures 12.3: Numerical Model 12.4: Results and Discussions 12.5: Conclusion Chapter 13: Dimensionality Effects in the Two-Electron System in Circular and Elliptic Quantum Dots 13.1: Introduction 13.2: Structures 13.3: Method 13.3.1: Density Functional Method 13.3.2: Exact Diagonalization of a Two-Electron Hamiltonian 13.4: Results and Discussion 13.4.1: Confinement Potential 13.4.2: Two Electrons in QDs 13.5: Conclusion Chapter 14: Single-Particle State Mixing in Two-Electron Coupled Quantum Dots Chapter 15: Exchange Interaction and Stability Diagram of Coupled Quantum Dots in Magnetic Fields 15.1: Introduction 15.2: Model 15.3: Total Energy and Chemical Potential 15.4: Stability Diagram 15.5: Exchange Interaction: Exact Diagonalization Versus the Hubbard Model 15.6: Conclusion Chapter 16: Coulomb Localization and Exchange Modulation in Two-Electron Coupled Quantum Dots Chapter 17: Single-Particle State Mixing and Coulomb Localization in Two-Electron Realistic Coupled Quantum Dots 17.1: Introduction 17.2: Method 17.3: Results and Conclusion Chapter 18: Von Neumann–Wigner Theorem in Quantum Dot Molecules Chapter 19: Non-monotonic Variation of the Exchange Energy in Double Elliptic Quantum Dots 19.1: Introduction 19.2: Model and Method 19.3: Results 19.3.1: Aspect Ratio Dependence of the Exchange Energy 19.3.2: Stability Diagrams 19.3.3: Spin Phase Diagram 19.4: Conclusions Part II: Electrostatic Quantum Dots: Vertical Technology Chapter 20: Modeling of the Electronic Properties of Vertical Quantum Dots by the Finite Element Method 20.1: Introduction 20.2: Vertical Tunneling Structures 20.3: Model 20.3.1: Bulk Region 20.3.2: Dot Region 20.3.3: Boundary Conditions 20.3.4: Single Electron Charging 20.4: Mesh Generation 20.5: Finite Element Formulation 20.5.1: Reference Finite Element 20.5.2: Poisson Equation 20.5.3: Kohn-Sham Equation 20.6: Results 20.7: Conclusion Chapter 21: Addition Energy Spectrum of a Quantum Dot Disk up to the Third Shell 21.1: Introduction 21.2: Results and Discussion Chapter 22: Shell Charging and Spin Filling Sequences in Realistic Vertical Quantum Dots Chapter 23: Three-Dimensional Analysis of the Electronic Structure of Cylindrical Vertical Quantum Dots 23.1: Introduction 23.2: Cylindrical Vertical Quantum Dot Structures 23.3: Analytical Model 23.3.1: Potential Model 23.3.1.1: Intrinsic region (0: ≤ z ≤ zi) 23.3.1.2: N-doped region (z > zi) 23.3.2: 2D Eigenstates Analysis 23.3.2.1: qW = λhωXY 23.3.2.2: qW= (hω)2[v (X4: + Y4)+ ηX2: Y2] 23.4: Numerical Model 23.5: Results and Discussion 23.6: Conclusion Chapter 24: Hybrid LSDA/Diffusion Quantum Monte Carlo Method for Spin Sequences in Vertical Quantum Dots 24.1: Introduction 24.2: Structure Description and Device Operation 24.3: Approximations for the Many-Body Problem 24.3.1: The Electron Confining Potential and Dimensionality 24.3.2: The Electron-Electron Interaction 24.4: The Hybrid LSDA/DQMC Method (LSDA/DQMC) 24.5: Results 24.6: Conclusion Chapter 25: Self-Consistent Simulations of a Four Gated Vertical Quantum Dot 25.1: Introduction 25.2: Four Gated Square Vertical Quantum Dot (4GVQD) Structure 25.3: Numerical Model 25.4: Results 25.5: Conclusion Chapter 26: Three-Dimensional Self-Consistent Simulations of Symmetric and Asymmetric Laterally Coupled Vertical Quantum Dots 26.1: Introduction 26.2: Laterally Coupled Vertical Double Dot System 26.3: Computational Model 26.4: Results 26.4.1: Symmetric Double Dot System 26.4.2: Asymmetric Double Quantum Dot System 26.4.2.1: Effect of a 5% asymmetricity 26.4.2.2: Effect of a 10% asymmetricity 26.4.2.3: Partial restoration of symmetry by asymmetric side gate biases 26.5: Conclusions Chapter 27: Spin Configurations in Circular and Rectangular Quantum Dot in a Magnetic Field: Three-Dimensional Self-Consistent Simulations 27.1: Introduction 27.2: Device Structures 27.3: Model and Simulation Details 27.4: Results and Discussion 27.4.1: Addition Energy Spectra at Zero Magnetic Field 27.4.2: Charging Diagrams in a Magnetic Field 27.4.3: Singlet-Triplet Transition in a Two Electron System 27.5: Conclusion Chapter 28: Spin Charging Sequences in Three Colinear Laterally Coupled Vertical Quantum Dots 28.1: Introduction 28.2: Vertical Triple Quantum Dot Structure 28.3: Computational Model 28.4: Results 28.4.1: TQD Structure Optimization 28.4.2: Single Electron Charging 28.4.2.1: Center gate charging 28.4.2.2: Side gate charging 28.4.3: Stability Diagram 28.5: Conclusion Chapter 29: Many-Body Excitations in the Tunneling Current Spectra of a Few-Electron Quantum Dot Chapter 30: Coupled Quantum Dots as Two-Level Systems: A Variational Monte Carlo Approach 30.1: Introduction 30.2: Materials and Methodology 30.3: Results 30.4: Discussion and Conclusion Chapter 31: Tunable Many-Body Effects in Triple Quantum Dots 31.1: Introduction 31.2: TQD Structure: Model Potential 31.3: Variational Monte Carlo Technique 31.4: Results 31.5: Summary Part III: Self-Assembled Quantum Dots Chapter 32: Self-Consistent Calculation of the Electronic Structure and Electron–Electron Interaction in Self-Assembled InAs-GaAs Quantum Dot Structures 32.1: Introduction 32.2: Model 32.2.1: Background 32.2.2: Local-Spin-Density Approximation 32.2.3: Transition State 32.3: Results 32.3.1: Variable Dot Size 32.3.2: Charging Effects 32.3.3: Comparison with Experiment 32.4: Conclusion Chapter 33: Electronic Coupling in InAs/GaAs Self-Assembled Stacked Double Quantum Dot Systems 33.1: Introduction 33.2: Structure Description 33.3: Model 33.4: Results 33.5: Conclusion Chapter 34: Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots 34.1: Introduction 34.2: Model 34.2.1: Local Spin Density Approximation 34.2.2: Transition State 34.3: Results Chapter 35: Electronic Structure of Self-Assembled Quantum Dots: Comparison Between Density Functional Theory and Diffusion Quantum Monte Carlo 35.1: Introduction 35.2: Density Function Theory and the Local Spin Density Approximation 35.3: Quantum Monte Carlo Methods 35.4: Numerical Comparison 35.5: Conclusions Chapter 36: Electronic Properties of InAs/GaAs Self-Assembled Quantum Dots: Beyond the Effective Mass Approximation 36.1: Introduction 36.2: Model 36.3: Single Pyramidal InAs/GaAs Self-Assembled Quantum Dots 36.4: Lens-Shaped InAs/GaAs Self-Assembled Quantum Dots 36.5: Coupled InAs/GaAs Self-Assembled Quantum Dots Chapter 37: Electron-Hole Alignment in InAs/GaAs Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape Chapter 38: Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Self-Assembled InAs/GaAs Quantum Dots 38.1: Introduction 38.2: Model and Results 38.3: Discussion 38.4: Conclusions Chapter 39: Interband Transition Distributions in the Optical Spectra of InAs/GaAs Self-Assembled Quantum Dots Chapter 40: Effects of Thin GaAs Insertion Layer on InAs/(InGaAs)/InP(001) Quantum Dots Grown by Metalorganic Chemical Vapor Deposition Chapter 41: Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked InAs/GaAs Self-Assembled Quantum Dots Chapter 42: Enhanced Intraband Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots Chapter 43: Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots Chapter 44: Spontaneous Localization in InAs/GaAs Self-Assembled Quantum Dot Molecules Chapter 45: Enhanced Piezoelectric Effects in Three-Dimensionally Coupled Self-Assembled Quantum Dot Structures 45.1: Introduction 45.2: Structure Model and Computational Methods 45.3: Electronic Structure 45.4: Optical Properties 45.5: Conclusions Chapter 46: Anisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled InAs/GaAs Self-Assembled Quantum Dots 46.1: Introduction 46.2: Structure Models and Theoretical Methods 46.2.1: Structure Model 46.2.2: Equilibrium Atomic Positions and Piezoelectric Potential 46.2.3: Electronic Structures 46.3: Results and Discussions 46.3.1: Strain Profiles and Band-Edge Potentials 46.3.2: Electronic Structures in the Absence of the Piezoelectric Potential 46.3.2.1: Conduction band 46.3.2.2: Valence band 46.3.3: Piezoelectric Potential 46.3.3.1: Single quantum dot 46.3.3.2: Laterally coupled quantum dots 46.3.4: Electronic Structures in the Presence of the Piezoelectric Potential 46.3.4.1: Conduction band 46.3.4.2: Valence band 46.3.5: Optical Properties 46.3.5.1: Intraconduction band spectra 46.3.5.2: Interband spectra 46.4: Conclusion Part IV: Silicon/Germanium Nanocrystals Chapter 47: Three-Dimensional Self-Consistent Simulation of Silicon Quantum Dot Floating-Gate Flash Memory Device 47.1: Introduction 47.2: Model Description 47.3: Results and Discussion 47.4: Conclusion Chapter 48: Stark Effect and Single-Electron Charging in Silicon Nanocrystal Quantum Dots 48.1: Introduction 48.2: Model and Method 48.2.1: Poisson-Schrödinger Scheme 48.2.2: Local Density Approximation 48.2.3: Single-Electron Charging 48.2.4: Multigrid-Newton-Raphson Solver 48.2.5: Threshold Voltage and Device Capacitance 48.3: Results 48.4: Conclusion Chapter 49: Strain Effect in Large Silicon Nanocrystal Quantum Dots Chapter 50: Geometry and Strain Effects on Single-Electron Charging in Silicon Nanocrystals 50.1: Introduction 50.2: Model 50.3: Results 50.4: Conclusion Chapter 51: Three-Dimensional Self-Consistent Simulation of the Charging Time Response in Silicon Nanocrystal Flash Memories 51.1: Introduction 51.2: Device Model 51.2.1: Electronic Spectrum of a Silicon Nanocrystal: Kohn–Sham–Poisson Self-Consistent Scheme 51.3: Tunneling Model 51.4: Computational Scheme 51.5: Results 51.6: Conclusions Chapter 52: Effects of Crystallographic Orientations on the Charging Time in Silicon Nanocrystal Flash Memories Chapter 53: Intraband Absorption and Stark Effect in Silicon Nanocrystals 53.1: Introduction 53.2: Physical Model 53.2.1: Model Structure 53.2.2: Intraband Optical Properties 53.2.3: Numerical Methods 53.3: Results 53.3.1: Shape, Crystallographic Orientation, and Size Dependence 53.3.2: Intraband Absorption 53.4: Concluding Remarks Chapter 54: Intraband Absorption in Silicon Nanocrystals: The Combined Effect of Shape and Crystal Orientation Chapter 55: Hole- Versus Electron-Based Operations in SiGe Nanocrystal Nonvolatile Memories Chapter 56: Light-Induced Programming of Si Nanocrystal Flash Memories Chapter 57: Interface Defect-Assisted Single Electron Charging (and Discharging) Dynamics in Ge Nanocrystals Memories Index
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