MOS Interface Physics, Process and Characterization
- Length: 174 pages
- Edition: 1
- Language: English
- Publisher: CRC Press
- Publication Date: 2021-10-05
- ISBN-10: 1032106271
- ISBN-13: 9781032106274
- Sales Rank: #1826379 (See Top 100 Books)
The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure.
This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability.
This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.
Cover Half Title Title Page Copyright Page Table of Contents Preface Authors INTRODUCTION 0.1 SCOPE AND PLAN OF THE BOOK 0.2 BRIEF HISTORY OF MOS DEVICES BIBLIOGRAPHY Chapter 1 Physics of Interface 1.1 MOS INTERFACE 1.2 THE PHYSICAL NATURE OF INTERFACE STATES AND BULK DEFECTS 1.3 MOS INTERFACE PASSIVATION METHODS 1.4 INTERFACE THERMODYNAMICS 1.5 QUANTUM CONFINEMENT EFFECT IN MOS 1.6 INTERFACIAL DIPOLE IN MOS GATE STACKS 1.7 EXTRACTION METHOD OF DIPOLE FORMATION AT HIGH-K/SIO[sub(2)] INTERFACE 1.7.1 Capacitance–Voltage Method 1.7.2 Method Based on X-ray Photoemission Spectroscopy 1.7.3 Method Based on Internal Photoemission 1.8 PHYSICAL ORIGIN OF DIPOLE FORMATION AT HIGH-K/SIO[sub(2)] INTERFACE 1.8.1 Electronegativity Model 1.8.2 Areal Oxygen Density Model 1.8.3 Interface Induced Gap States Model 1.9 “ROLL-OFF” AND “ROLL-UP” PHENOMENON 1.10 PHYSICAL ORIGIN OF FIXED CHARGES AT GE/GEO[sub(X)] INTERFACE 1.11 SUMMARY BIBLIOGRAPHY Chapter 2 MOS Processes 2.1 MOS CAPACITOR PREPARATION PROCESS 2.1.1 Slicing 2.1.2 Cleaning 2.1.3 Dielectric Formation 2.1.4 Metal Evaporation to Form Electrodes 2.2 OXIDATION PROCESS AND KINETICS 2.2.1 Thermal Processing (RTP) and Plasma Oxidation Systems 2.2.1.1 Thermal Processing (RTP) Systems 2.2.1.2 Plasma Oxidation Systems 2.2.2 Summary of Oxidation 2.3 DEPOSITION PROCESS 2.3.1 Sputtering 2.3.2 Atomic Layer Deposition 2.3.3 Vacuum Thermal Evaporation 2.3.4 Molecular Beam Epitaxy (MBE) 2.3.5 Metal Organic Chemical Vapor Deposition (MOCVD) 2.4 SUMMARY BIBLIOGRAPHY Chapter 3 MOS Characterizations 3.1 METHODS FOR EVALUATING THE DENSITY OF INTERFACE STATES OF MOS 3.1.1 High-Frequency (Terman) Method 3.1.2 Quasi-Static (Low-Frequency) Method 3.1.3 High–Low-Frequency Method 3.1.4 C–φ[sub(s)] Method 3.1.5 Conductance Method 3.2 EXPERIMENTAL STEP 3.2.1 Calibrate the Equipment 3.2.1.1 Phase Calibration 3.2.1.2 Butt Joint of Coaxial Joint and Triaxial Joint 3.2.1.3 Open-Circuit Calibration 3.2.1.4 Short-Circuit Calibration 3.2.2 C–V Curve Was Measured After Calibration 3.2.3 An Example of Measuring Density of Interface States of SiC MOS by Conductance Method 3.2.3.1 Part 1: Measurement of the C–V Curve 3.2.3.2 Part 2: Measurement of the G–f Curve 3.2.3.3 Part 3: Measurement of the System Series Resistance R[sub(s)] 3.3 HYSTERESIS AND BULK CHARGE 3.3.1 Interface Trapped Charge 3.3.2 Near Interface Trapped Charge (Border Trap) 3.3.3 Fixed Charge in the Oxide Layer 3.4 EQUIVALENT OXIDE THICKNESS 3.5 LEAKAGE 3.5.1 Direct Tunneling 3.5.2 Poole–Frenkel Leakage 3.5.3 Fowler–Nordheim Tunneling 3.5.4 Other Transport Mechanisms of Carriers 3.6 WORK FUNCTION AND EFFECTIVE WORK FUNCTION 3.6.1 Definition of EWF Based on Terraced SiO[sub(2)] 3.6.2 Definition of EWF Based on Terraced High-k Dielectric 3.6.3 Quantitative Analysis of the Effects of Various Factors on EWF BIBLIOGRAPHY APPENDIX I: PHYSICAL CONSTANTS APPENDICES II–V: USEFUL DATA FOR MOS INTERFACE IN PERIODIC TABLE
Donate to keep this site alive
1. Disable the AdBlock plugin. Otherwise, you may not get any links.
2. Solve the CAPTCHA.
3. Click download link.
4. Lead to download server to download.