Modern Semiconductor Physics and Device Applications
- Length: 382 pages
- Edition: 1
- Language: English
- Publisher: CRC Press
- Publication Date: 2021-11-17
- ISBN-10: 0367250829
- ISBN-13: 9780367250829
- Sales Rank: #2454010 (See Top 100 Books)
This textbook provides a theoretical background for contemporary trends in solid state theory and semiconductor device physics. It discusses advanced methods of quantum mechanics and field theory and is therefore primarily intended for graduate students in theoretical and experimental physics who have already studied electrodynamics, statistical physics, and quantum mechanics. It also relates solid-state physics fundamentals to semiconductor device applications and includes auxiliary results from mathematics and quantum mechanics, making the book useful also for graduate students in electrical engineering and material science.
Key Features:
- Explores concepts common in textbooks on semiconductors, in addition to topics not included in similar books currently available on the market, such as the topology of Hilbert space in crystals
- Contains the latest research and developments in the field
- Written in an accessible yet rigorous manner
Cover Half Title Title Page Copyright Page Table of Contents Preface Authors 1 Quantum Electron States and Energy Bands 1.1 Crystal Structures 1.2 Bravais Lattices 1.3 Schrödinger Equation for an Electron in a Periodic Crystal Lattice Potential 1.3.1 Symmetry and Classification of Electron Energy States 1.3.2 Reciprocal Lattice and Brillouin Zone 1.4 The Nearly-Free Electron Approximation 1.5 The Kronig-Penney Model 1.6 The Tight-Binding Approximation 1.7 The k-p Method 1.8 Effective Mass of an Electron 1.9 Electron Density of States 1.10 Korringa-Kohn-Rostoker and Ab-Initio Methods 1.11 Spin–Orbit Interaction 1.12 Luttinger-Kohn Band Structure: Si, Ge, and GaAs 1.13 Energy Bands in Graphene 1.14 Narrow-Gap Semiconductors 1.15 Inverted Bands. Semimetals and Berry Field References 2 Quantum Confinement in Semiconductors 2.1 Size Quantization 2.1.1 Envelope Functions and Effective Hamiltonian 2.2 Electrons in Quantum Wells 2.3 Quantum Well States in the Valence Band 2.4 2D-Semiconductors 2.5 Quantum Wires and 1D-Semiconductors 2.6 3D-Confinement: Quantum Dots 2.7 Electrons States on Surfaces and Interfaces: Tamm States 2.8 Topological Insulator and Surface States. Gapless Dirac Fermions References 3 Impurities and Disorder in Semiconductors 3.1 Single Impurity: Donors and Acceptors 3.2 Screening of Impurity Potential by Free Electrons 3.3 Electron in the Field of Impurity Potential 3.4 Model of Short-Range Impurity Potential 3.5 T-Matrix Approximation 3.6 Electron States of an Impurity Atom in the Crystalline Lattice: Tight-Binding Approach 3.7 Magnetic Impurity 3.8 Anderson Model for Magnetic Impurity 3.9 Heavily Doped Semiconductors: Disorder Potential 3.10 Impurity Bands. Impurity Band Tail 3.11 Semiconductor Alloys 3.11.1 Virtual Crystal and CPA Approximation 3.12 Electron in a Smooth Disorder Potential References 4 Statistics of Electrons in Semiconductors 4.1 Statistical Physics: Gibbs Distribution 4.2 Metals and Semiconductors 4.3 Intrinsic Semiconductors 4.4 Electron Distribution in Doped Semiconductors 4.4.1 Simple Donors and Acceptors 4.4.2 Degenerate Impurities 4.4.3 Multivalent Impurities and Electron Interaction 4.4.4 Amphoteric Impurities References 5 Electrons in a Magnetic Field 5.1 Lorentz Force 5.2 Circular Motion in a Magnetic Field 5.2.1 Cyclotron Mass in Anisotropic Semiconductors 5.3 Landau Quantization 5.3.1 Landau Levels: Degeneracy and Density of States 5.4 Landau Levels in Symmetric Gauge 5.5 Ladder Operators 5.6 Localized States and Extended Chiral Modes 5.7 Dirac Electrons in a Magnetic Field 5.8 Chiral Anomaly 5.9 Landau Spectrum in a Narrow-Gap Semiconductor 5.10 Landau Levels in Rashba Electron Gas 5.11 Aharonov–Bohm Effect References 6 Phonons and Electron–Phonon Interaction 6.1 Types of Chemical Bonds 6.2 Born-Oppenheimer Approximation 6.3 Lattice Dynamics 6.3.1 Phonons 6.3.2 One-Dimensional Chain: Acoustical Vibrations 6.3.3 One-Dimensional Chain: Optical Vibrations 6.3.4 Optical Vibrations in Ionic Dielectric Crystals: Lyddane–Sachs–Teller Relation 6.4 Thermodynamics of Lattice Vibrations. Heat Capacity 6.4.1 The Density of States 6.5 Phonon–Phonon Interaction 6.5.1 Thermal Expansion 6.5.2 Thermal Conductivity and Resistance 6.6 Electron–Phonon Interaction 6.6.1 Deformation Potentials 6.6.2 Electron–Phonon Interaction in Ionic Crystals 6.6.2.1 FrÖhlich Hamiltonian 6.6.2.2 Piezoelectric Interaction References 7 Transport Properties 7.1 Electrons in Electric and Magnetic Fields 7.2 Nonequilibrium State under Electric Field or Temperature Gradient 7.3 Electric Current: Conductivity Tensor 7.4 Drude Theory 7.5 Hall Effect 7.6 Thermoelectric and Thermo-Electromagnetic Effects 7.7 Kinetic Equation 7.8 Kinetic Coefficients 7.9 Symmetry of Kinetic Coefficients: Onsager’s Principle 7.10 Macroscopic Equations 7.11 Electron Wave Packet in Electric and Magnetic Fields 7.12 Quantum Transport: Green’s Functions and Feynman Diagrams 7.12.1 Green’s Function Technique at T = 0 7.12.2 Green’s Function Technique at Finite Temperatures 7.13 Quantum Transport Approach to Conductivity 7.14 Quantum Hall Effect: Hall Conductivity as a Berry Phase: Thouless-Kohmoto-Nightingale-Nijs (TKNN) Theory 7.15 Laughlin and Halperin Explanation of QHE 7.16 Fractional QHE 7.17 Anderson Localization 7.18 Theory of Weak Localization 7.19 Minimum Metallic Conductivity and Mott Transition References 8 Impurity Band Conductivity 8.1 Low-Temperature Conductivity and Electron Hopping 8.2 Variable-Range Hopping References 9 Spin-Resolved Transport in Semiconductors 9.1 Spin Transport and Spin Current 9.2 Anomalous Hall Effect 9.3 Mechanism of AHE Related to the Spin-Orbit Scattering from Impurities 9.4 Intrinsic Mechanism of AHE: Quantization of AHE 9.5 Spin Hall Effect 9.6 Current-Induced Spin Polarization and Spin Torque References 10 Electron Scattering 10.1 Elements of Scattering Theory 10.2 Electron Scattering in Solids 10.3 Impurity Scattering: Momentum Relaxation Time 10.3.1 Electron Scattering by a Screened Coulomb Potential 10.3.2 Unscreened Coulomb Potential 10.4 Neutral Impurity Scattering 10.5 Phonon Scattering 10.5.1 Transport Relaxation Time 10.6 Simultaneous Action of Several Scattering Mechanisms 10.7 Spin-Dependent Scattering and Spin Relaxation Time 10.8 Kondo Effect References 11 Magnetic Semiconductors 11.1 Direct and Indirect Interactions between Magnetic Impurities 11.2 RKKY Interaction 11.3 Indirect Exchange in Dielectrics: Bloembergen–Rowland Mechanism 11.4 Ferromagnetic Ordering of Magnetic Impurities 11.5 Magnetic Order and Percolation 11.6 Spin Glass 11.7 Diluted Magnetic Semiconductors 11.8 GaMnAs Magnetic Semiconductor 11.9 Stoner Ferromagnetism References 12 Optical Properties 12.1 Coupling to Electromagnetic Field and Gauges 12.2 Phenomenological Approach to Wave Propagation 12.2.1 Quasi-Static Fields 12.2.2 Energy Flux 12.2.3 Electromagnetic Waves in a Conductive Media 12.2.4 Negative Refraction 12.2.5 Intraband Free Carrier Absorption 12.3 Interband Absorption in Semiconductors 12.3.1 Momentum Conservation in Direct Interband Transitions 12.3.2 Absorption Due to Allowed and Forbidden Transitions 12.3.3 Indirect Optical Transitions 12.4 Exciton Transitions 12.5 Impurity-Band Optical Transitions 12.6 Electroabsorption and Franz–Keldysh Effect 12.7 Lattice Absorption 12.8 Optical Spin Orientation and Spin-Galvanic Effect 12.8.1 Spin Relaxation 12.8.2 Spin-Galvanic Effect References 13 Nonequilibrium Electrons and Holes 13.1 Lifetime of Nonequilibrium Carriers: Phenomenological Approach 13.1.1 Direct Band-to-Band Recombination 13.1.2 Schokley–Read–Hall Recombination 13.1.3 Auger Recombination 13.2 Recombination: Microscopic Approach 13.2.1 Radiative Recombination 13.2.2 Auger Recombination: Bulk Semiconductors 13.2.3 Auger Recombination. Quantum Wells References 14 Schottky Contacts and p–n Junctions 14.1 Contacts Metal-Semiconductor 14.1.1 Energy Band Diagram 14.1.2 Rectifying Contacts 14.1.3 Weak Band Bending 14.1.4 Strong Band Bending 14.1.5 Inverse Contact 14.1.6 Current–Voltage Characteristics 14.1.7 Thermionic Emission Model 14.1.8 Drift-Diffusion Model 14.1.9 Barrier Height Lowering 14.1.10 Transmission Modes and Ohmic Contacts 14.1.11 Equivalent Circuit and Frequency Response 14.2 P–n Junctions 14.2.1 Depletion Region 14.2.2 Carrier Distributions 14.2.3 Forward Bias 14.2.4 Reverse Bias 14.2.4.1 Diode Breakdown 14.2.5 Frequency Response References 15 Field-Effect Transistors 15.1 Energy Band Diagrams 15.2 Accumulation Regime 15.2.1 Current–Voltage Characteristics 15.3 Depletion Regime 15.3.1 Current–Voltage Characteristics 15.4 FET Extrinsic Parameters 15.5 High-Electron Mobility Transistors 15.5.1 Remote Doping 15.5.2 Polarization Doping in III-Nitride HEMTs 15.6 Frequency Response and Power Characteristics 15.6.1 Switching Time 15.6.2 Output Power, Power Gain, and Power-Added Efficiency References 16 Semiconductor Lasers 16.1 Quasi-Fermi Levels and Population Inversion 16.2 Diode Laser Design 16.3 Resonant Cavity and Longitudinal Modes 16.3.1 Distributed Mirrors and Mode Selectivity 16.4 Modal Gain and Threshold Condition 16.5 Recombination Currents 16.6 Light-Current Characteristics and Efficiency 16.7 Temperature Sensitivity of the Threshold Current 16.7.1 Threshold Carrier Density 16.7.2 Radiative Recombination Current 16.7.3 Auger Recombination Currents 16.7.4 Threshold Current 16.8 Light-Emitting Diodes 16.9 Material Choice and Engineering in III–V Semiconductor Heterojunctions 16.10 Quantum Cascade Laser References 17 Semiconductor Photodetectors 17.1 Photoconductors 17.1.1 Generation Rate and Distribution of Carriers 17.1.2 Uniform Illumination, Photoresponse, and Relaxation Times 17.1.3 Steady-State Illumination. Photoconductive Gain and Responsivity 17.1.4 Rectangular Pulse Illumination 17.1.5 Frequency Response 17.1.6 The Noise in Photodetectors 17.1.7 Specific Detectivity 17.1.8 Background Limited Performance 17.2 Photodiodes 17.3 Quantum Well Photodetectors 17.3.1 Intersubband Absorption 17.3.2 Responsivity and Gain 17.3.3 The Noise and Detectivity 17.4 Concluding Remarks References 18 Device Applications of Novel 2D Materials 18.1 Graphene 18.1.1 Field-Effect Transistors 18.2 Topological Insulators 18.2.1 Contacts and Gating 18.2.2 Heterojunctions 18.2.3 Photodetectors 18.2.4 Field-Effect Transistors 18.2.5 Magnetic Devices 18.2.6 Optoelectronics References Index
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